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  RU6085H n-channel advanced power mosfet features pin description ? 60v/80a, r ds (on) =6m ? (typ.)@v gs =10v r ds (on) =6.5m ? (typ.)@v gs =4.5v ? super high dense cell design ? ultra low on-resistance ? fast switching speed ? lead free and green devices available (rohs compliant) sop-8 applications ? power management. ? switch applications. ? load switch n-channel mosfet absolute maximum ratings symbol parameter rating unit common ratings (t a =25c unless otherwise noted) v dss drain-source voltage 60 v v gss gate-source voltage 20 t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c i s diode continuous forward current t a =25c 20 a mounted on large heat sink i dp 300 s pulse drain current tested t a =25c 320 a i d continuous drain current(v gs =10v) t a =25c 80 a t a =70c 50 p d maximum power dissipation t a =25c 2.5 w t a =70c 1.6 r ? jc thermal resistance-junction to case - c/w r ? ja thermal resistance-junction to ambient 50 c/w drain-source avalanche ratings e as avalanche energy, single pulsed tbd mj ruichips semiconductor co., ltd rev. a? aug., 2016 1 www.ruichips.com
RU6085H electrical characteristics (t a =25c unless otherwise noted) symbol parameter test condition RU6085H unit min. typ. max. static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250a 60 v i dss zero gate voltage drain current v ds =60v, v gs =0v 1 a t j =125c 30 v gs(th) gate threshold voltage v ds =v gs , i ds =250a 1 1.6 3 v i gss gate leakage current v gs =20v, v ds =0v 100 na r ds(on) drain-source on-state resistance v gs =10v, i ds =20a 6 7 m ? v gs =4.5v, i ds =12a 6.5 8 m ? diode characteristics v sd diode forward voltage i sd =20a, v gs =0v 1.2 v t rr reverse recovery time i sd =20a, dl sd /dt=100a/s 38 ns q rr reverse recovery charge 72 nc dynamic characteristics r g gate resistance v gs =0v,v ds =0v,f=1mhz 1.2 ? c iss input capacitance v gs =0v, v ds =30v, frequency=1.0mhz 3450 pf c oss output capacitance 310 c rss reverse transfer capacitance 115 t d(on) turn-on delay time v dd =30v,i ds =20a, v gen =10v,r g =4.7 ? 28 ns t r turn-on rise time 32 t d(off) turn-off delay time 98 t f turn-off fall time 68 gate charge characteristics q g total gate charge v ds =48v, v gs =10v, i ds =20a 75 nc q gs gate-source charge 19 q gd gate-drain charge 26 notes: pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. the package limitation current is 20a. when mounted on 1 inch square copper board, t 10sec. limited by tjmax. starting tj = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. ruichips semiconductor co., ltd rev. a? aug., 2016 2 www.ruichips.com
RU6085H ordering and marking information device marking package packaging qua ntity reel size tape width RU6085H RU6085H sop-8 tape&reel 2500 13?? 12mm ruichips semiconductor co., ltd rev. a? aug., 2016 3 www.ruichips.com
RU6085H typical characteristics ruichips semiconductor co., ltd rev. a? aug., 2016 4 www.ruichips.com v gs =10v i ds =20a 10s 100s 1ms dc r ds(on) limited t a =25c single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r ja =50 c/w
RU6085H typical characteristics ruichips semiconductor co., ltd rev. a? aug., 2016 5 www.ruichips.com 2v 3v 5v vgs=8,9,10v 10v 4.5v v gs =10v i ds =20a t j =25c rds(on)=6.3m ? t j =25c t j =150c ciss coss crss frequency=1.0mhz v ds =48v i ds =20a
RU6085H avalanche test circuit and waveforms switching time test circuit and waveforms ruichips semiconductor co., ltd rev. a? aug., 2016 6 www.ruichips.com
RU6085H package information ruichips semiconductor co., ltd rev. a? aug., 2016 7 www.ruichips.com sop-8 min nom max min nom max a 1.300 1.525 1.750 0.051 0.060 0.069 a1 0.050 0.150 0.250 0.002 0.006 0.010 a2 1.300 1.450 1.550 0.051 0.057 0.061 b 0.330 0.420 0.510 0.013 0.017 0.020 c 0.170 * 0.260 0.007 * 0.010 d 4.700 4.900 5.100 0.185 0.193 0.201 e 3.700 3.900 4.100 0.146 0.154 0.161 e1 5.800 6.000 6.200 0.228 0.236 0.244 e 1.270 bsc 0.050 bsc l 0.400 0.835 1.270 0.016 0.033 0.050 0 * 8 0 * 8 symbol mm inch
RU6085H customer service ruichips semiconductor co., ltd rev. a? aug., 2016 8 www.ruichips.com worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd 4th floor, block 8, changyuan new material port, keyuan middle road, science & industry park, nanshan district, shenzhen, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz@ruichips.com


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